cystech electronics corp. spec. no. : c602m3 issued date : 2017.11.06 revised date : page no. : 1/7 BTD1616AN3 cystek product specification general purpose npn epitaxial planar transistor BTD1616AN3 features ? high breakdown voltage, bv ceo 60v ? large continuous collector current capability ? low collector saturation voltage ? pb-free lead plating and halogen-free package symbol outline ordering information device package shipping BTD1616AN3-0-t1-g sot-23 (pb-free lead plating and halogen-free package) 3000 pcs / tape & reel BTD1616AN3 sot-23 b base c collector e emitter bv ceo 60v i c 3a environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products c e b packing spec, t1 :3000 pcs/tape & reel, 7? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c602m3 issued date : 2017.11.06 revised date : page no. : 2/7 BTD1616AN3 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 7 v collector current (dc) i c 3 a collector current (pulse) i cp 5 a base current i b 0.5 a 310 ( note 1 ) mw power dissipation p d 500 ( note 2 ) mw 403 ( note 1 ) c/w thermal resistance, junction to ambient r ja 250 ( note 2 ) c/w operating junction and storage temperature range tj ; tstg -55~+150 c note: 1.device mounted on fr-4 pcb with minimum pad 2.device mounted on fr-4 pcb with area of 4.5? 5 ? , mounting pad 0.02 in2 of 2 oz copper characteristics (ta=25c) symbol min. typ. max. unit test conditions bv cbo 120 - - v i c =100 a bv ceo 60 - - v i c =1ma bv ebo 7 - - v i e =50 a i cbo - - 100 na v cb =120v i ebo - - 100 na v eb =7v *v ce(sat) - 98 150 mv i c =1a, i b =50ma *v ce(sat) - 131 200 mv i c =1a, i b =20ma *v ce(sat) - 90 250 mv i c =1a, i b =100ma *v ce(sat) - 150 300 mv i c =2a, i b =200ma *v be(sat) - - 1 v i c =1a, i b =50ma *v be(sat) - - 1.2 v i c =1a, i b =100ma *v be(on) - - 1 v v ce =2v, i c =1a *h fe 1 150 - - - v ce =2v, i c =100ma *h fe 2 180 - 390 - v ce =2v, i c =500ma *h fe 3 100 - - - v ce =2v, i c =1a *h fe 4 50 - - - v ce =2v, i c =2a f t 100 - - mhz v ce =2v, i c =100ma, f=100mhz cob - 11 18 pf v cb =10v, i e =0a,f=1mhz ton - 40 - tstg - 500 - tf - 120 - ns v cc =30v, i c =1a, i b 1=-i b 2=33ma, rl=30 *pulse test: pulse width 380 s, duty cycle 2%
cystech electronics corp. spec. no. : c602m3 issued date : 2017.11.06 revised date : page no. : 3/7 BTD1616AN3 cystek product specification typical characteristics emitter grounded output characteristics 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0123456 collector-to-emitter voltage---vce(v) collector current---ic(ma) ib=0 ib=2ma ib=4ma ib=6ma ib=8ma ib=10ma emitter grounded output characteristics 0 100 200 300 400 500 600 700 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=0 ib=500ua ib=1ma ib=1.5ma ib=2ma ib = 2. 5m a emitter grounded output characteristics 0 20 40 60 80 100 120 140 0123456 collector-to-emitter voltage---vce(v) collector current---ic(ma) ib=100ua ib=200ua ib=300ua ib=400ua ib=500ua ib=0 current gain vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) current gain---hfe vce=1v vce=2v vce=5v saturation voltage vs collector current 10 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) ic=50ib ic=20ib ic=100ib vce(sat) saturation voltage vs collector current 100 1000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vbe(sat)@ic=50ib
cystech electronics corp. spec. no. : c602m3 issued date : 2017.11.06 revised date : page no. : 4/7 BTD1616AN3 cystek product specification typical characteristic curves(cont.) on voltage vs collector current 100 1000 1 10 100 1000 10000 collector current---ic(ma) on voltage---(mv) vce=2v power derating curves 0 100 200 300 400 500 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(mw) see note 2 on page 1 see note 1 on page 1 cutoff frequency vs collector current 10 100 1000 1 10 100 1000 collector current --- ic(ma) cutoff frequency---ft(mhz) ft@vce=5v capacitance characteristics 1 10 100 1000 0.1 1 10 100 reverse-biased voltage---(v) capacitance---(pf) f=1mhz cib cob recommended soldering footprint
cystech electronics corp. spec. no. : c602m3 issued date : 2017.11.06 revised date : page no. : 5/7 BTD1616AN3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c602m3 issued date : 2017.11.06 revised date : page no. : 6/7 BTD1616AN3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c602m3 issued date : 2017.11.06 revised date : page no. : 7/7 BTD1616AN3 cystek product specification sot-23 dimension style : pin 1.base 2.emitter 3.collecto r 3-lead sot-23 plastic surface mounted package cystek package code: n3 marking: product code date code: year+month year: 5 2015, 6 2016 ???, etc. month: 1 1, 2 2, ??? 9 9, a 10, b 11, c 12 dg *:typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1102 0.1204 2.80 3.04 j 0.0032 0.0079 0.08 0.20 b 0.0472 0.0669 1.20 1.70 k 0.0197 0.0283 0.50 0.72 c 0.0335 0.0453 0.89 1.15 l 0.0335 0.0453 0.85 1.15 d 0.0118 0.0197 0.30 0.50 s 0.0830 0.1161 2.10 2.95 g 0.0669 0.0787 1.70 2.00 v 0.0098 0.0256 0.25 0.65 h 0.0000 0.0040 0.00 0.10 l1 0. 0118 0.0236 0.30 0.60 notes : 1.controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cysrek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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